The Physics of Group IV Semiconductors Workshop 2003

Invited Speakers

Confirmed invited speakers include:

• Danie Auret - [Email]
  University of Pretoria, Pretoria, SOUTH AFRICA
  DLTS of defects introduced in Si (and SiGe) by low energy (<5 keV) particles [Abstract]
• Brian Bech Nielsen - [Email]
  Institut for Fysik og Astronomi, Aarhus Universitet, Ny Munkegade, 8000 Århus C, DENMARK
  Properties of vacancy-hydrogen defects in group-IV semiconductors [Abstract]
• Péter Deák - [Email]
  Institute of Physics, Technical University of Budapest H-1111 Budafoki ut. 8. Budapest, HUNGARY
  Studies on defect complexes in Si and SiC [Abstract]
• Bob Falster
  MEMC SpA, Novara, Italy
  The Control and Engineering of Intrinsic Point Defects in Silicon Crystal Growth and Wafer Processing [Abstract]
• Tom Gregorkiewicz - [Email]
  Van der Waals--Zeeman Institute, University of Amsterdam, 65 Valckenierstraat, NL-1018 XE Amsterdam, The Netherlands
  Using a free-electron laser for two-color spectroscopy of re-doped semiconductors [Abstract]
• Dieter Gruen - [Email]
  Argonne National Laboratory, 9700 S. Cass Avenue, Argonne, IL 60439, USA
  Plasma Processes of Interest to the Growth of Ultrananocrystalline Diamond and to Etching of Silicon Semiconductors [Abstract]
• Robert Hull - [Email]
  116 Engineer's Way, P.O. Box 400745, Charlottesville, VA 22904-4745, USA
  Interactions Between Misfit Dislocations, Surface Morphology, and Point Defects During Strain Relaxation in Semiconductor Heteroepitaxy [Abstract]
• Bob Jones - [Email]
  School of Physics, University of Exeter, Stocker Road, Exeter, EX4 4QL, UK
  Single hydrogen defects and hydrogen dimers in Si [Abstract]
• Harris Kagan - [Email]
  Building 22, CERN, CH-1211 Genève 23, SWITZERLAND
  Recent Developments in Diamond Detectors [Abstract]
• Erhard Kohn - [Email]
  Universitat Ulm, Department of Electron Devices and Circuits, Albert-Einstein-Allee 45, 89081 Ulm, GERMANY
  Diamond MEMS [Abstract]
• Satoshi Koizumi - [Email]
  Advanced Materials Laboratory, NIMS, 1-1 Namiki, Tsukuba, Ibaraki, JAPAN
  n-Type doping of diamond and the device applications [Abstract]
• Matthias Posselt - [Email]
  Forschungszentrum Rossendorf, Institute of Ion Beam Physics and Materials Research, P.O.Box 510113 D-01314 Dresden, GERMANY
  Ion implantation and ion-beam-induced defect formation in Si and SiC studied by atomistic computer simulations [Abstract]
• Kimmo Saarinen - [Email]
  Laboratory of Physics, Helsinki University of Technology, P.O.Box 1100, FIN-02015 HUT, FINLAND
  Vacancy-impurity complexes in highly n-type Si and SiGe: atomic structure, formation mechanisms, and electrical properties [Abstract]
• Michael Seibt - [Email]
  IV.Physikalisches Institut der Georg-August-Universität Göttingen and Sonderforschungsbereich 602, Bunsenstr.13-15, D-37073 Göttingen, GERMANY
  Quantitative high-resolution electron microscopy of defects and interfaces in silicon-based systems [Abstract]
• Bengt Svensson - [Email]
  University of Oslo, Department of Physics, Physical Electronics, P.B. 1048 Blindern, N-0316 Oslo, NORWAY
  Epitaxial 4H-Silicon Carbide and High-Purity/Low-Doped Silicon; Irradiation-Induced Point Defects [Abstract]
• Alberto Tagliaferro - [Email]
  Dip. Fisica & Unità INFM, Politecnico di Torino, Torino, ITALY
  Optical properties of amorphous carbons and Amorphous carbon nitrides [Abstract]
• Dan Twitchen - [Email]
  Element Six, King's Park Ride, Ascot, Berks SL5 8BP, UK
  Single crystal microwave plasma deposited CVD diamond [Abstract]
• George Watkins - [Email]
  16A Memorial Drive East, Sherman Fairchild Laboratory, room 209A, Lehigh University, Bethlehem, PA 18015, USA
  Vacancies and interstitials in Group IV semiconductors: what has been learned from EPR studies [Abstract]

If anyone listed here should want to add to or modify their details, they should contact either Steve Sque or James Adey.

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