The Physics of Group IV SemiconductorsWorkshop 2003 |
This document is also available in PDF format including a campus map designed specifically for the conference.
J. Evans-Freeman | UMIST | j.evans-freeman@umist.ac.uk |
A. Mainwood | King's College London | alison.mainwood@kcl.ac.uk |
R. Jones | University of Exeter | jones@excc.ex.ac.uk |
J. Adey | University of Exeter | adey@excc.ex.ac.uk |
S. Sque | University of Exeter | sque@excc.ex.ac.uk |
The Physics of Group IV Semiconductors Workshop 2003 is a collaboration between the UK Network on Point Defects in Silicon and Si/Ge and the UK Diamond Research Network.
The workshop will be held at the University of Exeter between the 7th and 10th of April 2003.
There is a need for papers. There will be a published proceedings of full length papers in the Journal of Physics: Condensed Matter. The deadline for the submission of abstracts is the 21 February 2003.
Unless stated all events take place in the Harrison building, rooms 101, 102 and 103.
Sunday April 6 | |
Participants arrive; a ferry service will run between Exeter St. David's station and Mardon Hall. | |
17:00-20:00 | Registration: Foyer of Mardon Hall |
19:00-23:00 | Wine Reception: Mardon Hall |
20:00-21:00 | Buffet Dinner: Mardon Hall |
19:00-23:00 | Bar Facilities available in Mardon Hall |
Monday April 7 | |
7:30-8:30 | Breakfast: Mardon Hall |
Session I: Chair J. Evans-Freeman - [Email] | |
9:15-9:30 | Introduction |
9:30-10:15 | Properties of vacancy-hydrogen defects in group-IV semiconductors [Abstract], B. Bech Nielsen - [Email], Institut for Fysik og Astronomi, Aarhus Universitet, Ny Munkegade, 8000 Århus C, Denmark |
10:15-10:30 | Discussion |
10:30-11:00 | Coffee |
Session II: Chair G. Davies - [Email] | |
11:00-11:45 | Using a free-electron laser for two-color spectroscopy of re-doped semiconductors [Abstract], T. Gregorkiewicz - [Email], Van der Waals--Zeeman Institute, University of Amsterdam, 65 Valckenierstraat, NL-1018 XE Amsterdam, The Netherlands |
11:45-12:00 | Discussion |
12:00-12:25 | The origin of the 0.78 eV luminescence band in strained layer SiGe/Si samples, A. J. Kenyon, Department of Electronic & Electrical Engineering, University College London, Torrington Place, London WC1E 7JE, United Kingdom |
12:25-12:30 | Discussion |
12:30-12:55 | Photoluminescence as a probe of defect evolution in ion-implanted silicon, R. Harding, Department of Physics, King's College London, London WC2R 2LS, United Kingdom |
12:55-13:00 | Discussion |
13:00-14:00 | Buffet Lunch |
Session III: Chair K. Saarinen - [Email] | |
14:00-14:45 | Studies on defect complexes in Si and SiC [Abstract], P. Deák - [Email], Physical Institute of the Technical University of Budapest, Budapest, Hungary |
14:45-15:00 | Discussion |
15:00-15:45 | Epitaxial 4H-Silicon Carbide and High-Purity/Low-Doped Silicon; Irradiation-Induced Point Defects [Abstract], B. Svensson - [Email], University of Oslo, Department of Physics, Physical Electronics, P.B. 1048 Blindern, N-0316 Oslo, Norway |
15:45-16:00 | Discussion |
16:00-16:30 | Tea |
Session IV: Chair P. Deák - [Email] | |
16:30-16:55 | Recent Developments in Laplace Deep-Level Transient Spectroscopy, A. R. Peaker, Centre for Electronic Materials Devices and Nanostuctures, University of Manchester Institute of Science and Technology, Manchester M60 1QD, UK |
16:55-17:00 | Discussion |
17:00-17:25 | Electronic structure of divacancy-hydrogen complexes in silicon, J. Coutinho, Department of Physics, University of Aveiro, 3810 Aveiro, Portugal |
17:25-17:30 | Discussion |
17:30-18:15 | The Control and Engineering of Intrinsic Point Defects in Silicon Crystal Growth and Wafer Processing [Abstract], R. Falster, MEMC SpA, Novara, Italy |
18:15-18:30 | Discussion |
19:30-20:30 | Dinner: Mardon Hall |
20:30- | Poster Session (Silicon) and Bar: Mardon Hall common room |
20:00-23:00 | Bar in Mardon Hall |
Tuesday April 8 | |
7:30-8:30 | Breakfast: Mardon Hall |
Session V: Chair R. Falster | |
9:00-9:45 | Interactions Between Misfit Dislocations, Surface Morphology, and Point Defects During Strain Relaxation in Semiconductor Heteroepitaxy [Abstract], R. Hull - [Email], Department of Materials Science and Engineering, University of Virgina, 116 Engineer's Way, P.O. Box 400745, Charlottesville, VA 22904-4745, USA |
9:45-10:00 | Discussion |
10:00-10:45 | Vacancy-impurity complexes in highly n-type Si and SiGe: atomic structure, formation mechanisms, and electrical properties [Abstract], K. Saarinen - [Email], Laboratory of Physics, Helsinki University of Technology, P.O. Box 1100, FIN-02015 HUT, Finland |
10:45-11:00 | Discussion |
11:00-11:30 | Coffee |
Session VI: Chair B. Bech Nielsen - [Email] | |
11:30-12:15 | Ion implantation and ion-beam-induced defect formation in Si and SiC studied by atomistic computer simulations [Abstract], M. Posselt - [Email], Forschungszentrum Rossendorf, Institute of Ion Beam Physics and Materials Research, P.O. Box 510113 D-01314 Dresden, Germany |
12:15-12:30 | Discussion |
12:30-14:00 | Buffet Lunch |
Session VII: Chair R. Hull - [Email] | |
14:00-14:45 | Quantitative high-resolution electron microscopy of defects and interfaces in silicon-based systems [Abstract], M. Seibt - [Email], IV.Physikalisches Institut der Georg-August-Universität Göttingen and Sonderforschungsbereich 602, Bunsenstr.13-15, D-37073 Göttingen, Germany |
14:45-15:00 | Discussion |
15:00-15:45 | DLTS of defects introduced in Si (and SiGe) by low energy (<5 keV) particles [Abstract], D. Auret - [Email], University of Pretoria, Pretoria, South Africa |
15:45-16:00 | Discussion |
16:00-16:30 | Tea |
Session VIII: Chair M. Seibt - [Email] | |
16:30-17:15 | n-Type doping of diamond and the device applications [Abstract], S. Koizumi - [Email], Advanced Materials Laboratory, NIMS, 1-1 Namiki, Tsukuba, Ibaraki, Japan |
17:15-17:30 | Discussion |
17:30-17:55 | Electrical behaviour of antimony implants in silicon at large tilt angle, G. Claudio, School of Electronics and Physical Sciences, University of Surrey, Guildford GU2 7XH UK |
17:55-18:00 | Discussion |
19:30-20:30 | Dinner: Mardon Hall |
20:30- | Poster Session (Diamond) and Bar: Mardon Hall common room |
20:00-23:00 | Bar in Mardon Hall |
Wednesday April 9 | |
7:30-8:30 | Breakfast: Mardon Hall |
Session IX: Chair A. Mainwood - [Email] | |
9:00-9:45 | Vacancies and interstitials in Group IV semiconductors: what has been learned from EPR studies [Abstract], G. D. Watkins - [Email], Sherman Fairchild Laboratory, Lehigh University, Bethlehem, USA |
9:45-10:00 | Discussion |
10:00-10:45 | Single crystal microwave plasma deposited CVD diamond [Abstract], D. Twitchen - [Email], Element Six, King's Park Ride, Ascot, Berks SL5 8BP, UK |
10:45-11:00 | Discussion |
11:00-11:30 | Coffee |
Session X: Chair D. Twitchen - [Email] | |
11:30-12:15 | Single hydrogen defects and hydrogen dimers in Si [Abstract], R. Jones - [Email], School of Physics, University of Exeter, Stocker Road, Exeter, EX4 4QL, UK |
12:15-12:30 | Discussion |
12:30-12:35 | Conference photograph: Assemble outside Harrison building |
12:35-14:00 | Buffet Lunch |
Session XI: Chair W. I. Milne - [Email] | |
14:00-14:45 | Optical properties of amorphous carbons and Amorphous carbon nitrides [Abstract], A. Tagliaferro - [Email], Dip. Fisica & Unità INFM, Politecnico di Torino, Torino, ITALY |
14:45-15:00 | Discussion |
15:00-15:25 | Multi-wavelength laser Raman and X-ray photoelectron spectroscopy of phosphorus containing DLC films, G. M. Fuge, School of Chemistry, University of Bristol, Bristol BS8 1TS, U.K. |
15:25-15:30 | Discussion |
15:30-15:55 | The dissociation of dislocations in diamond, A. T. Blumenau, University of Paderborn, Theoretical Physics, Faculty of Science, D - 33098 Paderborn, Germany |
15:55-16:00 | Discussion |
16:00-16:30 | Tea |
Session XII: Chair E. Kohn - [Email] | |
16:30-16:55 | The vacancy-nitrogen-hydrogen complex in diamond: a potential deep centre in CVD material, J. P. Goss, School of Natural Sciences, University of Newcastle upon Tyne, Newcastle upon Tyne, NE1 7RU, U.K. |
16:55-17:00 | Discussion |
17:00-17:25 | Mapping the energy levels of the self-interstitial in diamond, H. E. Smith, Physics Department, King's College London, Strand, London WC2R 2LS, UK |
17:25-17:30 | Discussion |
17:30-18:15 | Plasma Processes of Interest to the Growth of Ultrananocrystalline Diamond and to Etching of Silicon Semiconductors [Abstract], D. Gruen - [Email], Argonne National Laboratory, 9700 S. Cass Avenue, Argonne, IL 60439, USA |
18:15-18:30 | Discussion |
19:30-20:00 | Banquet Reception: Reed Hall |
20:00-00:00 | Conference Banquet: Reed Hall |
Thursday April 10 | |
7:30-8:30 | Breakfast: Mardon Hall |
Session XIII: Chair D. Gruen - [Email] | |
9:00-9:45 | Diamond MEMS [Abstract], E. Kohn - [Email], Universität Ulm, Department of Electron Devices and Circuits, Albert-Einstein-Allee 45, 89081 Ulm, Germany |
9:45-10:00 | Discussion |
10:00-10:45 | Recent Developments in Diamond Detectors [Abstract], H. Kagan - [Email], Dept. of Physics, Ohio State University, 174 W. 18th Ave, Columbus, OH 43210 USA |
10:45-11:00 | Discussion |
11:00-11:30 | Coffee |
Session XIV: Chair R. Jones - [Email] | |
11:30-11:55 | Growth and characterisation of epitaxial and polycrystalline n-type CVD diamond films, K. Haenen, Limburgs Universitair Centrum, Institute for Materials Research, Wetenschapspark 1, B-3590 Diepenbeek, Belgium |
11:55-12:00 | Discussion |
12:00 | Lunch and close of workshop |
Ferry service to run between between Mardon Hall and Exeter St. David's station |
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