Point Defects in Si and SiGe

The Physics of Group IV Semiconductors

Workshop 2003

UK Diamond Research

Preliminary Programme

This document is also available in PDF format including a campus map designed specifically for the conference.

Workshop Organisers

J. Evans-Freeman UMIST j.evans-freeman@umist.ac.uk
A. Mainwood King's College London alison.mainwood@kcl.ac.uk

Local organisers

R. Jones University of Exeter jones@excc.ex.ac.uk
J. Adey University of Exeter adey@excc.ex.ac.uk
S. Sque University of Exeter sque@excc.ex.ac.uk


The Physics of Group IV Semiconductors Workshop 2003 is a collaboration between the UK Network on Point Defects in Silicon and Si/Ge and the UK Diamond Research Network.

The workshop will be held at the University of Exeter between the 7th and 10th of April 2003.

There is a need for papers. There will be a published proceedings of full length papers in the Journal of Physics: Condensed Matter. The deadline for the submission of abstracts is the 21 February 2003.

Preliminary Programme

Unless stated all events take place in the Harrison building, rooms 101, 102 and 103.

Sunday April 6   Monday April 7   Tuesday April 8   Wednesday April 9   Thursday April 10

Sunday April 6
Participants arrive; a ferry service will run between Exeter St. David's station and Mardon Hall.
17:00-20:00Registration: Foyer of Mardon Hall
19:00-23:00Wine Reception: Mardon Hall
20:00-21:00Buffet Dinner: Mardon Hall
19:00-23:00Bar Facilities available in Mardon Hall
Monday April 7
7:30-8:30Breakfast: Mardon Hall
Session I: Chair J. Evans-Freeman - [Email]
9:30-10:15Properties of vacancy-hydrogen defects in group-IV semiconductors [Abstract], B. Bech Nielsen - [Email], Institut for Fysik og Astronomi, Aarhus Universitet, Ny Munkegade, 8000 Århus C, Denmark
Session II: Chair G. Davies - [Email]
11:00-11:45 Using a free-electron laser for two-color spectroscopy of re-doped semiconductors [Abstract], T. Gregorkiewicz - [Email], Van der Waals--Zeeman Institute, University of Amsterdam, 65 Valckenierstraat, NL-1018 XE Amsterdam, The Netherlands
12:00-12:25The origin of the 0.78 eV luminescence band in strained layer SiGe/Si samples, A. J. Kenyon, Department of Electronic & Electrical Engineering, University College London, Torrington Place, London WC1E 7JE, United Kingdom
12:30-12:55Photoluminescence as a probe of defect evolution in ion-implanted silicon, R. Harding, Department of Physics, King's College London, London WC2R 2LS, United Kingdom
13:00-14:00Buffet Lunch
Session III: Chair K. Saarinen - [Email]
14:00-14:45Studies on defect complexes in Si and SiC [Abstract], P. Deák - [Email], Physical Institute of the Technical University of Budapest, Budapest, Hungary
15:00-15:45Epitaxial 4H-Silicon Carbide and High-Purity/Low-Doped Silicon; Irradiation-Induced Point Defects [Abstract], B. Svensson - [Email], University of Oslo, Department of Physics, Physical Electronics, P.B. 1048 Blindern, N-0316 Oslo, Norway
Session IV: Chair P. Deák - [Email]
16:30-16:55Recent Developments in Laplace Deep-Level Transient Spectroscopy, A. R. Peaker, Centre for Electronic Materials Devices and Nanostuctures, University of Manchester Institute of Science and Technology, Manchester M60 1QD, UK
17:00-17:25Electronic structure of divacancy-hydrogen complexes in silicon, J. Coutinho, Department of Physics, University of Aveiro, 3810 Aveiro, Portugal
17:30-18:15The Control and Engineering of Intrinsic Point Defects in Silicon Crystal Growth and Wafer Processing [Abstract], R. Falster, MEMC SpA, Novara, Italy
19:30-20:30Dinner: Mardon Hall
20:30- Poster Session (Silicon) and Bar: Mardon Hall common room
20:00-23:00Bar in Mardon Hall
Tuesday April 8
7:30-8:30Breakfast: Mardon Hall
Session V: Chair R. Falster
9:00-9:45 Interactions Between Misfit Dislocations, Surface Morphology, and Point Defects During Strain Relaxation in Semiconductor Heteroepitaxy [Abstract], R. Hull - [Email], Department of Materials Science and Engineering, University of Virgina, 116 Engineer's Way, P.O. Box 400745, Charlottesville, VA 22904-4745, USA
10:00-10:45Vacancy-impurity complexes in highly n-type Si and SiGe: atomic structure, formation mechanisms, and electrical properties [Abstract], K. Saarinen - [Email], Laboratory of Physics, Helsinki University of Technology, P.O. Box 1100, FIN-02015 HUT, Finland
Session VI: Chair B. Bech Nielsen - [Email]
11:30-12:15 Ion implantation and ion-beam-induced defect formation in Si and SiC studied by atomistic computer simulations [Abstract], M. Posselt - [Email], Forschungszentrum Rossendorf, Institute of Ion Beam Physics and Materials Research, P.O. Box 510113 D-01314 Dresden, Germany
12:30-14:00Buffet Lunch
Session VII: Chair R. Hull - [Email]
14:00-14:45Quantitative high-resolution electron microscopy of defects and interfaces in silicon-based systems [Abstract], M. Seibt - [Email], IV.Physikalisches Institut der Georg-August-Universität Göttingen and Sonderforschungsbereich 602, Bunsenstr.13-15, D-37073 Göttingen, Germany
15:00-15:45 DLTS of defects introduced in Si (and SiGe) by low energy (<5 keV) particles [Abstract], D. Auret - [Email], University of Pretoria, Pretoria, South Africa
Session VIII: Chair M. Seibt - [Email]
16:30-17:15n-Type doping of diamond and the device applications [Abstract], S. Koizumi - [Email], Advanced Materials Laboratory, NIMS, 1-1 Namiki, Tsukuba, Ibaraki, Japan
17:30-17:55Electrical behaviour of antimony implants in silicon at large tilt angle, G. Claudio, School of Electronics and Physical Sciences, University of Surrey, Guildford GU2 7XH UK
19:30-20:30Dinner: Mardon Hall
20:30- Poster Session (Diamond) and Bar: Mardon Hall common room
20:00-23:00Bar in Mardon Hall
Wednesday April 9
7:30-8:30Breakfast: Mardon Hall
Session IX: Chair A. Mainwood - [Email]
9:00-9:45Vacancies and interstitials in Group IV semiconductors: what has been learned from EPR studies [Abstract], G. D. Watkins - [Email], Sherman Fairchild Laboratory, Lehigh University, Bethlehem, USA
10:00-10:45 Single crystal microwave plasma deposited CVD diamond [Abstract], D. Twitchen - [Email], Element Six, King's Park Ride, Ascot, Berks SL5 8BP, UK
10:45-11:00 Discussion
11:00-11:30 Coffee
Session X: Chair D. Twitchen - [Email]
11:30-12:15Single hydrogen defects and hydrogen dimers in Si [Abstract], R. Jones - [Email], School of Physics, University of Exeter, Stocker Road, Exeter, EX4 4QL, UK
12:15-12:30 Discussion
12:30-12:35 Conference photograph: Assemble outside Harrison building
12:35-14:00 Buffet Lunch
Session XI: Chair W. I. Milne - [Email]
14:00-14:45 Optical properties of amorphous carbons and Amorphous carbon nitrides [Abstract], A. Tagliaferro - [Email], Dip. Fisica & Unità INFM, Politecnico di Torino, Torino, ITALY
14:45-15:00 Discussion
15:00-15:25Multi-wavelength laser Raman and X-ray photoelectron spectroscopy of phosphorus containing DLC films, G. M. Fuge, School of Chemistry, University of Bristol, Bristol BS8 1TS, U.K.
15:30-15:55The dissociation of dislocations in diamond, A. T. Blumenau, University of Paderborn, Theoretical Physics, Faculty of Science, D - 33098 Paderborn, Germany
Session XII: Chair E. Kohn - [Email]
16:30-16:55The vacancy-nitrogen-hydrogen complex in diamond: a potential deep centre in CVD material, J. P. Goss, School of Natural Sciences, University of Newcastle upon Tyne, Newcastle upon Tyne, NE1 7RU, U.K.
17:00-17:25Mapping the energy levels of the self-interstitial in diamond, H. E. Smith, Physics Department, King's College London, Strand, London WC2R 2LS, UK
17:25-17:30 Discussion
17:30-18:15Plasma Processes of Interest to the Growth of Ultrananocrystalline Diamond and to Etching of Silicon Semiconductors [Abstract], D. Gruen - [Email], Argonne National Laboratory, 9700 S. Cass Avenue, Argonne, IL 60439, USA
18:15-18:30 Discussion
19:30-20:00 Banquet Reception: Reed Hall
20:00-00:00 Conference Banquet: Reed Hall
Thursday April 10
7:30-8:30Breakfast: Mardon Hall
Session XIII: Chair D. Gruen - [Email]
9:00-9:45 Diamond MEMS [Abstract], E. Kohn - [Email], Universität Ulm, Department of Electron Devices and Circuits, Albert-Einstein-Allee 45, 89081 Ulm, Germany
9:45-10:00 Discussion
10:00-10:45Recent Developments in Diamond Detectors [Abstract], H. Kagan - [Email], Dept. of Physics, Ohio State University, 174 W. 18th Ave, Columbus, OH 43210 USA
Session XIV: Chair R. Jones - [Email]
11:30-11:55Growth and characterisation of epitaxial and polycrystalline n-type CVD diamond films, K. Haenen, Limburgs Universitair Centrum, Institute for Materials Research, Wetenschapspark 1, B-3590 Diepenbeek, Belgium
12:00 Lunch and close of workshop
Ferry service to run between between Mardon Hall and Exeter St. David's station

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